KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2013-05-02
Print Publication Date2013-04-28
Permanent link to this recordhttp://hdl.handle.net/10754/315782
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AbstractWe investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell ( 1.5×1020 cm−3 ) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.
CitationSaeed Y, Singh N, Parker D, Schwingenschlögl U (2013) Thermoelectric performance of electron and hole doped PtSb2. Journal of Applied Physics 113: 163706. doi:10.1063/1.4803145.
JournalJournal of Applied Physics