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dc.contributor.authorGan, Liyong
dc.contributor.authorCheng, Yingchun
dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorZhang, Qingyun
dc.date.accessioned2014-04-13T14:30:20Z
dc.date.available2014-04-13T14:30:20Z
dc.date.issued2013-09-26
dc.identifier.citationGan L-Y, Zhang Q, Cheng Y, Schwingenschlögl U (2013) Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control. Phys Rev B 88. doi:10.1103/PhysRevB.88.235310.
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.88.235310
dc.identifier.urihttp://hdl.handle.net/10754/315778
dc.description.abstractWe study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.88.235310
dc.rightsArchived with thanks to Physical Review B
dc.titleTwo-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionSchool of Physics and CRANN, Trinity College, Dublin 2, Ireland
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personGan, Liyong
kaust.personZhang, Qingyun
kaust.personCheng, Yingchun
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-14T04:15:59Z


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