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    Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

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    Two-dimensional ferromagnet semiconductor transition metal dichalcogenide contacts p-type Schottky barrier and spin-injection control.pdf
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    Type
    Article
    Authors
    Gan, Liyong
    Cheng, Yingchun cc
    Schwingenschlögl, Udo cc
    Zhang, Qingyun
    KAUST Department
    Computational Physics and Materials Science (CPMS)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2013-12-18
    Permanent link to this record
    http://hdl.handle.net/10754/315778
    
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    Abstract
    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.
    Citation
    Gan L-Y, Zhang Q, Cheng Y, Schwingenschlögl U (2013) Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control. Phys Rev B 88. doi:10.1103/PhysRevB.88.235310.
    Publisher
    American Physical Society (APS)
    Journal
    Physical Review B
    DOI
    10.1103/PhysRevB.88.235310
    Additional Links
    http://link.aps.org/doi/10.1103/PhysRevB.88.235310
    ae974a485f413a2113503eed53cd6c53
    10.1103/PhysRevB.88.235310
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

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