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    Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

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    Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors.pdf
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    Type
    Article
    Authors
    Zhu, Zhiyong
    Cheng, Yingchun cc
    Schwingenschlögl, Udo cc
    KAUST Department
    Computational Physics and Materials Science (CPMS)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2011-10-14
    Permanent link to this record
    http://hdl.handle.net/10754/315771
    
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    Abstract
    Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148–456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications.
    Citation
    Zhu ZY, Cheng YC, Schwingenschlögl U (2011) Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys Rev B 84. doi:10.1103/PhysRevB.84.153402.
    Publisher
    American Physical Society (APS)
    Journal
    Physical Review B
    DOI
    10.1103/PhysRevB.84.153402
    Additional Links
    http://link.aps.org/doi/10.1103/PhysRevB.84.153402
    ae974a485f413a2113503eed53cd6c53
    10.1103/PhysRevB.84.153402
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

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