Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
Name:
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors.pdf
Size:
1.122Mb
Format:
PDF
Type
ArticleKAUST Department
Computational Physics and Materials Science (CPMS)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2011-10-14Permanent link to this record
http://hdl.handle.net/10754/315771
Metadata
Show full item recordAbstract
Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148–456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications.Citation
Zhu ZY, Cheng YC, Schwingenschlögl U (2011) Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys Rev B 84. doi:10.1103/PhysRevB.84.153402.Publisher
American Physical Society (APS)Journal
Physical Review BAdditional Links
http://link.aps.org/doi/10.1103/PhysRevB.84.153402ae974a485f413a2113503eed53cd6c53
10.1103/PhysRevB.84.153402