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dc.contributor.authorZhang, Qingyun
dc.contributor.authorCheng, Yingchun
dc.contributor.authorGan, Liyong
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2014-04-13T09:34:43Z
dc.date.available2014-04-13T09:34:43Z
dc.date.issued2013-12-30
dc.identifier.citationZhang Q, Cheng Y, Gan L-Y, Schwingenschlögl U (2013) Giant valley drifts in uniaxially strained monolayer MoS2. Phys Rev B 88. doi:10.1103/PhysRevB.88.245447.
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.88.245447
dc.identifier.urihttp://hdl.handle.net/10754/315746
dc.description.abstractUsing first-principles calculations, we study the electronic structure of monolayer MoS2 under uniaxial strain. We show that the energy valleys drift far off the corners of the Brillouin zone (K points), about 12 times the amount observed in graphene. Therefore, it is essential to take this effect into consideration for a correct identification of the band gap. The system remains a direct band gap semiconductor up to 4% uniaxial strain, while the size of the band gap decreases from 1.73 to 1.54 eV. We also demonstrate that the splitting of the valence bands due to inversion symmetry breaking and spin-orbit coupling is not sensitive to strain.
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.88.245447
dc.rightsArchived with thanks to Physical Review B
dc.titleGiant valley drifts in uniaxially strained monolayer MoS2
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdom
dc.contributor.institutionMaterials Engineering, Open University, Milton Keynes MK7 6AA, United Kingdom
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhang, Qingyun
kaust.personCheng, Yingchun
kaust.personGan, Liyong
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-14T04:16:49Z


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