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    Giant valley drifts in uniaxially strained monolayer MoS2

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    Giant valley drifts in uniaxially strained monolayer MoS2.pdf
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    Type
    Article
    Authors
    Zhang, Qingyun
    Cheng, Yingchun cc
    Gan, Liyong
    Schwingenschlögl, Udo cc
    KAUST Department
    Computational Physics and Materials Science (CPMS)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2013-12-30
    Permanent link to this record
    http://hdl.handle.net/10754/315746
    
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    Abstract
    Using first-principles calculations, we study the electronic structure of monolayer MoS2 under uniaxial strain. We show that the energy valleys drift far off the corners of the Brillouin zone (K points), about 12 times the amount observed in graphene. Therefore, it is essential to take this effect into consideration for a correct identification of the band gap. The system remains a direct band gap semiconductor up to 4% uniaxial strain, while the size of the band gap decreases from 1.73 to 1.54 eV. We also demonstrate that the splitting of the valence bands due to inversion symmetry breaking and spin-orbit coupling is not sensitive to strain.
    Citation
    Zhang Q, Cheng Y, Gan L-Y, Schwingenschlögl U (2013) Giant valley drifts in uniaxially strained monolayer MoS2. Phys Rev B 88. doi:10.1103/PhysRevB.88.245447.
    Publisher
    American Physical Society (APS)
    Journal
    Physical Review B
    DOI
    10.1103/PhysRevB.88.245447
    Additional Links
    http://link.aps.org/doi/10.1103/PhysRevB.88.245447
    ae974a485f413a2113503eed53cd6c53
    10.1103/PhysRevB.88.245447
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

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