Electronic structure of superlattices of graphene and hexagonal boron nitride
dc.contributor.author | Kaloni, Thaneshwor P. | |
dc.contributor.author | Cheng, Yingchun | |
dc.contributor.author | Schwingenschlögl, Udo | |
dc.date.accessioned | 2014-04-13T12:42:21Z | |
dc.date.available | 2014-04-13T12:42:21Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Kaloni TP, Cheng YC, Schwingenschlögl U (2011) Electronic structure of superlattices of graphene and hexagonal boron nitride. J Mater Chem 22: 919. doi:10.1039/c1jm14895h. | |
dc.identifier.issn | 0959-9428 | |
dc.identifier.issn | 1364-5501 | |
dc.identifier.doi | 10.1039/c1jm14895h | |
dc.identifier.uri | http://hdl.handle.net/10754/315745 | |
dc.description.abstract | We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors. | |
dc.language.iso | en | |
dc.publisher | Royal Society of Chemistry (RSC) | |
dc.relation.url | http://xlink.rsc.org/?DOI=c1jm14895h | |
dc.rights | Archived with thanks to Journal of Materials Chemistry | |
dc.title | Electronic structure of superlattices of graphene and hexagonal boron nitride | |
dc.type | Article | |
dc.contributor.department | Computational Physics and Materials Science (CPMS) | |
dc.contributor.department | Material Science and Engineering Program | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.identifier.journal | J. Mater. Chem. | |
dc.eprint.version | Publisher's Version/PDF | |
dc.contributor.institution | Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom | |
dc.contributor.institution | Engineering and Innovation, Open University, Milton Keynes MK7 6AA, United Kingdom | |
dc.contributor.institution | Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germany | |
dc.contributor.affiliation | King Abdullah University of Science and Technology (KAUST) | |
kaust.person | Kaloni, Thaneshwor P. | |
kaust.person | Cheng, Yingchun | |
kaust.person | Schwingenschlögl, Udo | |
refterms.dateFOA | 2018-06-14T04:00:48Z |
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