KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2012-08-23
Print Publication Date2012-08-15
Permanent link to this recordhttp://hdl.handle.net/10754/315736
MetadataShow full item record
AbstractCharge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.
CitationSchwingenschlögl U, Chroneos A, Schuster C, Grimes RW (2012) Electronegativity and doping in semiconductors. Journal of Applied Physics 112: 046101. doi:10.1063/1.4747932.
JournalJournal of Applied Physics
Showing items related by title, author, creator and subject.
Out-of-plane deformable semiconductor substrate, method of making an out-of-plane deformable semiconductor substrate, and an in-plane and out-of-plane deformable semiconductor substrateCAVAZOS, SEPULVEDA Adrián César; Hussain, Muhammad Mustafa (2018-05-31) [Patent]An out-of-plane deformable semiconductor substrate includes a plurality of rigid portions having a first thickness and an out-of-plane deformable portion having a second thickness and connecting the plurality of rigid portions to each other. The second thickness is smaller than the first thickness. The out-of-plane deformable semiconductor substrate is monolithic.
Organic Semiconductors: Rational Design of Organic Semiconductors for Texture Control and Self-Patterning on Halogenated Surfaces (Adv. Funct. Mater. 32/2014)Ward, Jeremy W.; Li, Ruipeng; Obaid, Abdulmalik; Payne, Marcia M.; Smilgies, Detlef-M.; Anthony, John E.; Amassian, Aram; Jurchescu, Oana D. (Advanced Functional Materials, Wiley-Blackwell, 2014-08) [Article]
Electronic device with a graphene device and semiconductor device formed on a common semiconductor substrateHussain, Aftab M. (2018-02-08) [Patent]A method for producing an electronic device involves forming a graphene precursor on a first portion of a common semiconductor substrate, forming a graphene layer on the graphene precursor, and forming a semiconductor device on a second portion of the common semiconductor substrate.