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dc.contributor.authorZhu, Zhiyong
dc.contributor.authorCheng, Yingchun
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2014-04-13T12:00:44Z
dc.date.available2014-04-13T12:00:44Z
dc.date.issued2012-06-29
dc.identifier.citationZhu Z, Cheng Y, Schwingenschlögl U (2012) Topological Phase Transition in Layered GaS and GaSe. Physical Review Letters 108. doi:10.1103/PhysRevLett.108.266805.
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.pmid23005005
dc.identifier.doi10.1103/PhysRevLett.108.266805
dc.identifier.urihttp://hdl.handle.net/10754/315735
dc.description.abstractBy fully relativistic first principles calculations, we predict that appropriate strain engineering of layered GaX (X=S, Se) leads to a new class of three-dimensional topological insulators with an excitation gap of up to 135 meV. Our results provide a new perspective on the formation of three-dimensional topological insulators. Band inversion can be induced by strain only, without considering any spin-orbit coupling. The latter, however, is indispensable for the formation of local band gaps at the crossing points of the inverted bands. Our study indicates that three-dimensional topological insulators can also be realized in materials which comprise light elements only.
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevLett.108.266805
dc.rightsArchived with thanks to Physical Review Letters
dc.titleTopological Phase Transition in Layered GaS and GaSe
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalPhysical Review Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
dc.contributor.institutionInstitut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhu, Zhiyong
kaust.personCheng, Yingchun
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-14T04:17:20Z


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