KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2012-09-27
Print Publication Date2012-09-24
Permanent link to this recordhttp://hdl.handle.net/10754/315729
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AbstractDespite their structural similarity, the electronic properties of silicene are fundamentally different from those of well-known graphene due to the strong intrinsic spin orbit interaction and buckled structure of silicene. We address the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field to clarify the interplay of the spin orbit interaction and the perpendicular electric field. We find that the band gap is electrically tunable and show that the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high magnetic field.
CitationTahir M, Schwingenschlögl U (2012) Magnetocapacitance of an electrically tunable silicene device. Appl Phys Lett 101: 132412. doi:10.1063/1.4754711.
JournalApplied Physics Letters