Show simple item record

dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorChroneos, Alexander
dc.contributor.authorGrimes, R. W.
dc.contributor.authorSchuster, Cosima
dc.date.accessioned2014-04-13T07:56:57Z
dc.date.available2014-04-13T07:56:57Z
dc.date.issued2010-06-17
dc.identifier.citationSchwingenschlögl U, Chroneos A, Schuster C, Grimes RW (2010) Extrinsic doping in silicon revisited. Appl Phys Lett 96: 242107. doi:10.1063/1.3455313.
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3455313
dc.identifier.urihttp://hdl.handle.net/10754/315727
dc.description.abstractBoth n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/96/24/10.1063/1.3455313
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleExtrinsic doping in silicon revisited
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdom
dc.contributor.institutionInstitut für Physik, Universität Augsburg, 86135 Augsburg, Germany
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-14T04:00:42Z


Files in this item

Thumbnail
Name:
Extrinsic doping in silicon revisited.pdf
Size:
319.6Kb
Format:
PDF

This item appears in the following Collection(s)

Show simple item record