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dc.contributor.authorNazir, Safdar
dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorSingh, Nirpendra
dc.date.accessioned2014-04-13T07:39:28Z
dc.date.available2014-04-13T07:39:28Z
dc.date.issued2011-06-29
dc.identifier.citationNazir S, Singh N, Schwingenschlögl U (2011) The metallic interface between the two band insulators LaGaO3 and SrTiO3. Appl Phys Lett 98: 262104. doi:10.1063/1.3604020.
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.3604020
dc.identifier.urihttp://hdl.handle.net/10754/315685
dc.description.abstractThe formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/98/26/10.1063/1.3604020
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleThe metallic interface between the two band insulators LaGaO3 and SrTiO3
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics and Astronomy, Clemson University, SC 29634, United States
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personNazir, Safdar
kaust.personSingh, Nirpendra
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-14T04:00:41Z
dc.date.published-online2011-06-29
dc.date.published-print2011-06-27


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