The metallic interface between the two band insulators LaGaO3 and SrTiO3

Abstract
The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

Citation
Nazir S, Singh N, Schwingenschlögl U (2011) The metallic interface between the two band insulators LaGaO3 and SrTiO3. Appl Phys Lett 98: 262104. doi:10.1063/1.3604020.

Publisher
AIP Publishing

Journal
Applied Physics Letters

DOI
10.1063/1.3604020

Additional Links
http://scitation.aip.org/content/aip/journal/apl/98/26/10.1063/1.3604020

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