The metallic interface between the two band insulators LaGaO3 and SrTiO3
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2011-06-29
Print Publication Date2011-06-27
Permanent link to this recordhttp://hdl.handle.net/10754/315685
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AbstractThe formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.
CitationNazir S, Singh N, Schwingenschlögl U (2011) The metallic interface between the two band insulators LaGaO3 and SrTiO3. Appl Phys Lett 98: 262104. doi:10.1063/1.3604020.
JournalApplied Physics Letters