KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Computational Physics and Materials Science (CPMS)
Permanent link to this recordhttp://hdl.handle.net/10754/314531
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AbstractA theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.
CitationNazir S, Upadhyay Kahaly M, Schwingenschlögl U (2012) High mobility of the strongly confined hole gas in AgTaO3/SrTiO3. Appl Phys Lett 100: 201607. doi:10.1063/1.4719106.
JournalApplied Physics Letters