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dc.contributor.authorBianchi Granato, Danilo
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2014-03-23T08:52:49Z
dc.date.available2014-03-23T08:52:49Z
dc.date.issued2013-06-01
dc.identifier.citationGranato DB, Caraveo-Frescas JA, Alshareef HN, Schwingenschlögl U (2013) Enhancement of p-type mobility in tin monoxide by native defects. Appl Phys Lett 102: 212105. doi:10.1063/1.4808382.
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4808382
dc.identifier.urihttp://hdl.handle.net/10754/314511
dc.description.abstractTransparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/102/21/10.1063/1.4808382
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleEnhancement of p-type mobility in tin monoxide by native defects
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personAlshareef, Husam N.
kaust.personSchwingenschlögl, Udo
kaust.personBianchi Granato, Danilo
refterms.dateFOA2018-06-14T04:00:35Z
dc.date.published-online2013-06-01
dc.date.published-print2013-05-27


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