AuthorsBianchi Granato, Danilo
Alshareef, Husam N.
Caraveo-Frescas, Jesus Alfonso
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Functional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2013-06-01
Print Publication Date2013-05-27
Permanent link to this recordhttp://hdl.handle.net/10754/314511
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AbstractTransparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.
CitationGranato DB, Caraveo-Frescas JA, Alshareef HN, Schwingenschlögl U (2013) Enhancement of p-type mobility in tin monoxide by native defects. Appl Phys Lett 102: 212105. doi:10.1063/1.4808382.
JournalApplied Physics Letters