Beating of magnetic oscillations in a graphene device probed by quantum capacitance
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2012-07-06
Print Publication Date2012-07-02
Permanent link to this recordhttp://hdl.handle.net/10754/314510
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AbstractWe report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.
CitationTahir M, Schwingenschlögl U (2012) Beating of magnetic oscillations in a graphene device probed by quantum capacitance. Appl Phys Lett 101: 013114. doi:10.1063/1.4732796.
JournalApplied Physics Letters