Thickness and strain effects on the thermoelectric transport in nanostructured Bi2Se3
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Computational Physics and Materials Science (CPMS)
Permanent link to this recordhttp://hdl.handle.net/10754/314507
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AbstractThe structural stability, electronic structure, and thermal transport properties of one to six quintuple layers (QLs) of Bi2Se3 are investigated by van der Waals density functional theory and semi-classical Boltzmann theory. The bandgap amounts to 0.41 eV for a single QL and reduces to 0.23 eV when the number of QLs increases to six. A single QL has a significantly higher thermoelectric figure of merit (0.27) than the bulk material (0.10), which can be further enhanced to 0.30 by introducing 2.5% compressive strain. Positive phonon frequencies under strain indicate that the structural stability is maintained.
CitationSaeed Y, Singh N, Schwingenschlögl U (2014) Thickness and strain effects on the thermoelectric transport in nanostructured Bi2Se3. Appl Phys Lett 104: 033105. doi:10.1063/1.4862923.
JournalApplied Physics Letters