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dc.contributor.authorChen, Cheng
dc.contributor.authorDjie, Hery Susanto
dc.contributor.authorHwang, James C. M.
dc.contributor.authorKoch, Thomas L.
dc.contributor.authorLester, Luke F.
dc.contributor.authorOoi, Boon S.
dc.contributor.authorWang, Yang
dc.date.accessioned2014-02-17T05:01:43Z
dc.date.available2014-02-17T05:01:43Z
dc.date.issued2011-02-18
dc.identifier.citationChen C, Wang Y, Djie HS, Ooi BS, Lester LF, et al. (2011) Intrinsic Dynamics of Quantum-Dash Lasers. IEEE J Select Topics Quantum Electron 17: 1167-1174. doi:10.1109/JSTQE.2010.2103373.
dc.identifier.issn1077-260X
dc.identifier.issn1558-4542
dc.identifier.doi10.1109/JSTQE.2010.2103373
dc.identifier.urihttp://hdl.handle.net/10754/312990
dc.description.abstractTemperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes. © 2011 IEEE.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5713805
dc.rightsArchived with thanks to IEEE Journal of Selected Topics in Quantum Electronics
dc.titleIntrinsic Dynamics of Quantum-Dash Lasers
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalIEEE Journal of Selected Topics in Quantum Electronics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionRF Micro Devices, Inc., Greensboro, NC 27409, United States
dc.contributor.institutionOptiComp Corp., Zephyr Cove, NV 89448, United States
dc.contributor.institutionJDS Uniphase Corp., San Jose, CA 95134, United States
dc.contributor.institutionCenter for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, United States
dc.contributor.institutionElectrical and Computer Engineering Department, Center for Optical Technologies, Lehigh University, Bethlehem, PA 18015, United States
dc.contributor.institutionCompound Semiconductor Technology Laboratory, Lehigh University, Bethlehem, PA 18015, United States
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personOoi, Boon S.
refterms.dateFOA2018-06-14T03:23:00Z
dc.date.published-online2011-02-18
dc.date.published-print2011-09


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