Djie, Hery Susanto
Hwang, James C. M.
Koch, Thomas L.
Lester, Luke F.
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2011-02-18
Print Publication Date2011-09
Permanent link to this recordhttp://hdl.handle.net/10754/312990
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AbstractTemperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes. © 2011 IEEE.
CitationChen C, Wang Y, Djie HS, Ooi BS, Lester LF, et al. (2011) Intrinsic Dynamics of Quantum-Dash Lasers. IEEE J Select Topics Quantum Electron 17: 1167-1174. doi:10.1109/JSTQE.2010.2103373.