InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/312978
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AbstractHigh density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.
CitationGuo W, Banerjee A, Bhattacharya P, Ooi BS (2011) InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon. Appl Phys Lett 98: 193102. doi:10.1063/1.3588201.
JournalApplied Physics Letters