Two-step controllable electrochemical etching of tungsten scanning probe microscopy tips
dc.contributor.author | Khan, Yasser | |
dc.contributor.author | Al-Falih, Hisham | |
dc.contributor.author | Ng, Tien Khee | |
dc.contributor.author | Ooi, Boon S. | |
dc.contributor.author | Zhang, Yaping | |
dc.date.accessioned | 2014-02-17T04:56:20Z | |
dc.date.available | 2014-02-17T04:56:20Z | |
dc.date.issued | 2012-06-22 | |
dc.identifier.citation | Khan Y, Al-Falih H, Zhang Y, Ng TK, Ooi BS (2012) Two-step controllable electrochemical etching of tungsten scanning probe microscopy tips. Review of Scientific Instruments 83: 063708. doi:10.1063/1.4730045. | |
dc.identifier.issn | 00346748 | |
dc.identifier.pmid | 22755635 | |
dc.identifier.doi | 10.1063/1.4730045 | |
dc.identifier.uri | http://hdl.handle.net/10754/312975 | |
dc.description.abstract | Dynamic electrochemical etching technique is optimized to produce tungsten tips with controllable shape and radius of curvature of less than 10 nm. Nascent features such as dynamic electrochemical etching and reverse biasing after drop-off are utilized, and two-step dynamic electrochemical etching is introduced to produce extremely sharp tips with controllable aspect ratio. Electronic current shut-off time for conventional dc drop-off technique is reduced to ?36 ns using high speed analog electronics. Undesirable variability in tip shape, which is innate to static dc electrochemical etching, is mitigated with novel dynamic electrochemical etching. Overall, we present a facile and robust approach, whereby using a novel etchant level adjustment mechanism, 30° variability in cone angle and 1.5 mm controllability in cone length were achieved, while routinely producing ultra-sharp probes. © 2012 American Institute of Physics. | |
dc.language.iso | en | |
dc.publisher | AIP Publishing | |
dc.relation.url | http://link.aip.org/link/RSINAK/v83/i6/p063708/s1&Agg=doi | |
dc.rights | Archived with thanks to Review of Scientific Instruments | |
dc.title | Two-step controllable electrochemical etching of tungsten scanning probe microscopy tips | |
dc.type | Article | |
dc.contributor.department | Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division | |
dc.contributor.department | Electrical Engineering Program | |
dc.contributor.department | Photonics Laboratory | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.identifier.journal | Review of Scientific Instruments | |
dc.eprint.version | Publisher's Version/PDF | |
dc.contributor.institution | Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, United States | |
dc.contributor.affiliation | King Abdullah University of Science and Technology (KAUST) | |
kaust.person | Khan, Yasser | |
kaust.person | Ng, Tien Khee | |
kaust.person | Ooi, Boon S. | |
kaust.person | Al-Falih, Hisham | |
kaust.person | Zhang, Yaping | |
refterms.dateFOA | 2018-06-14T04:17:14Z | |
dc.date.published-online | 2012-06-22 | |
dc.date.published-print | 2012-06 |
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