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dc.contributor.authorElafandy, Rami T.
dc.contributor.authorBhattacharya, Pallab K.
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.authorZhang, Meng
dc.date.accessioned2014-02-17T04:54:15Z
dc.date.available2014-02-17T04:54:15Z
dc.date.issued2012-09-18
dc.identifier.citationElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, et al. (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots. Journal of Applied Physics 112: 063506. doi:10.1063/1.4751434.
dc.identifier.issn00218979
dc.identifier.doi10.1063/1.4751434
dc.identifier.urihttp://hdl.handle.net/10754/312974
dc.description.abstractDifferences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://link.aip.org/link/JAPIAU/v112/i6/p063506/s1&Agg=doi
dc.rightsArchived with thanks to Journal of Applied Physics
dc.titleReduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Applied Physics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, MI 48109-2122, United States
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personNg, Tien Khee
kaust.personCha, Dong Kyu
kaust.personOoi, Boon S.
kaust.personElafandy, Rami T.
refterms.dateFOA2018-06-13T14:08:47Z
dc.date.published-online2012-09-18
dc.date.published-print2012-09-15


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