Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots
AuthorsElafandy, Rami T.
Bhattacharya, Pallab K.
Cha, Dong Kyu
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Physical Science and Engineering (PSE) Division
Online Publication Date2012-09-18
Print Publication Date2012-09-15
Permanent link to this recordhttp://hdl.handle.net/10754/312974
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AbstractDifferences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.
CitationElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, et al. (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots. Journal of Applied Physics 112: 063506. doi:10.1063/1.4751434.
JournalJournal of Applied Physics