Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots
AuthorsElafandy, Rami T.
Bhattacharya, Pallab K.
Cha, Dong Kyu
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
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AbstractDifferences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.
CitationElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, et al. (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots. Journal of Applied Physics 112: 063506. doi:10.1063/1.4751434.
JournalJournal of Applied Physics