Show simple item record

dc.contributor.authorNajar, Adel
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.authorBen Slimane, Ahmed
dc.contributor.authorSougrat, Rachid
dc.date.accessioned2014-02-17T04:49:33Z
dc.date.available2014-02-17T04:49:33Z
dc.date.issued2012-08-02
dc.identifier.citationNajar A, Slimane AB, Hedhili MN, Anjum D, Sougrat R, et al. (2012) Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method. Journal of Applied Physics 112: 033502. doi:10.1063/1.4740051.
dc.identifier.issn00218979
dc.identifier.doi10.1063/1.4740051
dc.identifier.urihttp://hdl.handle.net/10754/312973
dc.description.abstractWe report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://link.aip.org/link/JAPIAU/v112/i3/p033502/s1&Agg=doi
dc.rightsArchived with thanks to Journal of Applied Physics
dc.titleEffect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Applied Physics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, 1301, Beal Avenue, Ann Arbor, MI 48109-2122, United States
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personNajar, Adel
kaust.personBen Slimane, Ahmed
kaust.personHedhili, Mohamed N.
kaust.personAnjum, Dalaver H.
kaust.personSougrat, Rachid
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
refterms.dateFOA2018-06-14T03:22:53Z
dc.date.published-online2012-08-02
dc.date.published-print2012-08


Files in this item

Thumbnail
Name:
1.4740051.pdf
Size:
1.867Mb
Format:
PDF
Description:
Main article

This item appears in the following Collection(s)

Show simple item record