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dc.contributor.authorKhan, Mohammed Zahed Mustafa
dc.contributor.authorMajid, Mohammed Abdul
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2014-02-08T19:24:11Z
dc.date.available2014-02-08T19:24:11Z
dc.date.issued2013
dc.identifier.citationKhan MZM, Majid MA, Ng TK, Ooi BS (2013) High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656386.
dc.identifier.isbn978-1-4577-1506-8
dc.identifier.doi10.1109/IPCon.2013.6656386
dc.identifier.urihttp://hdl.handle.net/10754/312361
dc.descriptionPhotonics Conference (IPC), 2013 IEEE
dc.description.abstractThe demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656386
dc.titleHigh performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journal2013 IEEE Photonics Conference
dc.conference.date8 September 2013 through 12 September 2013
dc.conference.name2013 26th IEEE Photonics Conference, IPC 2013
dc.conference.locationBellevue, WA
dc.eprint.versionPublisher's Version/PDF
kaust.personKhan, Mohammed Zahed Mustafa
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.personMajid, Mohammed Abdul
refterms.dateFOA2018-06-13T14:08:45Z


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