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dc.contributor.authorHeo, Junseok
dc.contributor.authorBhattacharya, Pallab K.
dc.contributor.authorGuo, Wei
dc.contributor.authorOoi, Boon S.
dc.contributor.authorZhou, Zifan
dc.date.accessioned2014-02-05T11:54:13Z
dc.date.available2014-02-05T11:54:13Z
dc.date.issued2013-10-28
dc.identifier.citationHeo J, Zhou Z, Guo W, Ooi BS, Bhattacharya P (2013) Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy. Appl Phys Lett 103: 181102. doi:10.1063/1.4827338.
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4827338
dc.identifier.urihttp://hdl.handle.net/10754/312262
dc.description.abstractGaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://link.aip.org/link/APPLAB/v103/i18/p181102/s1&Agg=doi
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleCharacteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, United States
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of Michigan-Dearborn, Dearborn, MI 48128, United States
dc.contributor.institutionMicrosystems Engineering, Rochester Institute of Technology, Rochester, NY 14623, United States
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Ajou University, Suwon 443-749, South Korea
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personOoi, Boon S.
refterms.dateFOA2018-06-14T05:50:27Z
dc.date.published-online2013-10-28
dc.date.published-print2013-10-28


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