Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2013-10-28
Print Publication Date2013-10-28
Permanent link to this recordhttp://hdl.handle.net/10754/312262
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AbstractGaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.
CitationHeo J, Zhou Z, Guo W, Ooi BS, Bhattacharya P (2013) Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy. Appl Phys Lett 103: 181102. doi:10.1063/1.4827338.
JournalApplied Physics Letters
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