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dc.contributor.authorElafandy, Rami T.
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorMajid, Mohammed Abdul
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.authorZhao, Lan
dc.date.accessioned2014-02-05T11:52:11Z
dc.date.available2014-02-05T11:52:11Z
dc.date.issued2013-12-19
dc.identifier.citationElAfandy RT, Majid MA, Ng TK, Zhao L, Cha D, et al. (2014) Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes. Adv Funct Mater 24: 2305-2311. doi:10.1002/adfm.201303001.
dc.identifier.issn1616301X
dc.identifier.doi10.1002/adfm.201303001
dc.identifier.doi10.1002/adfm.201470104
dc.identifier.urihttp://hdl.handle.net/10754/312261
dc.description.abstractDespite the recent progress in gallium nitride (GaN) growth technology, the excessively high threading dislocation (TD) density within the GaN crystal, caused by the reliance on heterogeneous substrates, impedes the development of high-efficiency, low-cost, GaN-based heterostructure devices. For the first time, the chemical exfoliation of completely TD-free, single-crystalline, ultrathin (tens of nanometers) GaN nanomembranes is demonstrated using UV-assisted electroless chemical etching. These nanomembranes can act as seeding layers for subsequent overgrowth of high-quality GaN. A model is proposed, based on scanning and transmission electron microscopy as well as optical measurements to explain the physical processes behind the formation of the GaN nanomembranes. These novel nanomembranes, once transferred to other substrates, present a unique and technologically attractive path towards integrating high-efficiency GaN optical components along with silicon electronics. Interestingly, due to their nanoscale thickness and macroscopic sizes, these nanomembranes may enable the production of flexible GaN-based optoelectronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.language.isoen
dc.publisherWiley
dc.relation.urlhttp://doi.wiley.com/10.1002/adfm.201303001
dc.rightsArchived with thanks to Advanced Functional Materials
dc.titleExfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalAdvanced Functional Materials
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, United States
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personNg, Tien Khee
kaust.personCha, Dong Kyu
kaust.personOoi, Boon S.
kaust.personElafandy, Rami T.
kaust.personMajid, Mohammed Abdul
kaust.personZhao, Lan
refterms.dateFOA2018-06-13T12:11:25Z
dc.date.published-online2013-12-19
dc.date.published-print2014-04


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