Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Online Publication Date2013-09-17
Print Publication Date2013-10-01
Permanent link to this recordhttp://hdl.handle.net/10754/312253
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AbstractWe report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. © 2013 Optical Society of America.
CitationKhan MZM, Majid MA, Ng TK, Cha D, Ooi BS (2013) Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm. Optics Letters 38: 3720. doi:10.1364/OL.38.003720.
PublisherThe Optical Society
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