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dc.contributor.authorZhang, Yaping
dc.contributor.authorGao, Yangqin
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.authorSiang, Basil Chew Joo
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorZhao, Donghui
dc.contributor.authorJain, Himanshu
dc.date.accessioned2013-12-29T12:13:09Z
dc.date.available2013-12-29T12:13:09Z
dc.date.issued2010
dc.identifier.citationZhang Y, Gao Y, Ng TK, Ooi BS, Chew B, et al. (2010) Engineering of refractive index in sulfide chalcogenide glass by direct laser writing. 2010 Photonics Global Conference. doi:10.1109/PGC.2010.5705967.
dc.identifier.isbn978-1-4244-9882-6
dc.identifier.doi10.1109/PGC.2010.5705967
dc.identifier.urihttp://hdl.handle.net/10754/310661
dc.description.abstractArsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.
dc.description.sponsorshipKAUST- Academic Excellence Alliance (AEA) 2010 Grant
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5705967
dc.titleEngineering of refractive index in sulfide chalcogenide glass by direct laser writing
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2010 Photonics Global Conference
dc.conference.date14 December 2010 through 16 December 2010
dc.conference.name2010 Photonics Global Conference, PGC 2010
dc.conference.locationOrchard
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionLehigh University
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.personHedhili, Mohamed N.
kaust.personZhang, Yaping
kaust.personGao, Yangqin
kaust.personSiang, Basil Chew Joo
refterms.dateFOA2018-06-13T16:47:48Z


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