Engineering of refractive index in sulfide chalcogenide glass by direct laser writing
Ng, Tien Khee
Ooi, Boon S.
Siang, Basil Chew Joo
Hedhili, Mohamed N.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Materials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/310661
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AbstractArsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.
CitationZhang Y, Gao Y, Ng TK, Ooi BS, Chew B, et al. (2010) Engineering of refractive index in sulfide chalcogenide glass by direct laser writing. 2010 Photonics Global Conference. doi:10.1109/PGC.2010.5705967.
SponsorsKAUST- Academic Excellence Alliance (AEA) 2010 Grant
Journal2010 Photonics Global Conference
Conference/Event name2010 Photonics Global Conference, PGC 2010