Engineering of refractive index in sulfide chalcogenide glass by direct laser writing
Type
Conference PaperAuthors
Zhang, YapingGao, Yangqin

Ng, Tien Khee

Ooi, Boon S.

Siang, Basil Chew Joo
Hedhili, Mohamed N.

Zhao, Donghui
Jain, Himanshu
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Imaging and Characterization Core Lab
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Date
2010Permanent link to this record
http://hdl.handle.net/10754/310661
Metadata
Show full item recordAbstract
Arsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.Citation
Zhang Y, Gao Y, Ng TK, Ooi BS, Chew B, et al. (2010) Engineering of refractive index in sulfide chalcogenide glass by direct laser writing. 2010 Photonics Global Conference. doi:10.1109/PGC.2010.5705967.Sponsors
KAUST- Academic Excellence Alliance (AEA) 2010 GrantJournal
2010 Photonics Global ConferenceConference/Event name
2010 Photonics Global Conference, PGC 2010ISBN
978-1-4244-9882-6ae974a485f413a2113503eed53cd6c53
10.1109/PGC.2010.5705967