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dc.contributor.authorBen Slimane, Ahmed
dc.contributor.authorNajar, Adel
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2013-12-28T18:25:34Z
dc.date.available2013-12-28T18:25:34Z
dc.date.issued2012
dc.identifier.citationSlimane AB, Najar A, Ng TK, Ooi BS (2012) Thermal Annealing induced relaxation of compressive strain in porous GaN structures. IEEE Photonics Conference 2012. doi:10.1109/IPCon.2012.6359296.
dc.identifier.isbn978-1-4577-0731-5
dc.identifier.doi10.1109/IPCon.2012.6359296
dc.identifier.urihttp://hdl.handle.net/10754/310654
dc.description.abstractThe effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6359296
dc.titleThermal Annealing induced relaxation of compressive strain in porous GaN structures
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalIEEE Photonics Conference 2012
dc.conference.date23 September 2012 through 27 September 2012
dc.conference.name25th IEEE Photonics Conference, IPC 2012
dc.conference.locationBurlingame, CA
dc.eprint.versionPublisher's Version/PDF
kaust.personBen Slimane, Ahmed
kaust.personNajar, Adel
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
refterms.dateFOA2018-06-14T03:22:49Z


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