Thermal Annealing induced relaxation of compressive strain in porous GaN structures
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/310654
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AbstractThe effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
CitationSlimane AB, Najar A, Ng TK, Ooi BS (2012) Thermal Annealing induced relaxation of compressive strain in porous GaN structures. IEEE Photonics Conference 2012. doi:10.1109/IPCon.2012.6359296.
JournalIEEE Photonics Conference 2012
Conference/Event name25th IEEE Photonics Conference, IPC 2012