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dc.contributor.authorNajar, Adel
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.authorBen Slimane, Ahmed
dc.date.accessioned2013-12-28T17:16:37Z
dc.date.available2013-12-28T17:16:37Z
dc.date.issued2012
dc.identifier.citationNajar A, Slimane AB, Anjum DH, Ng TK, Ooi BS (2012) GaN Nanowires Synthesized by Electroless Etching Method. Conference on Lasers and Electro-Optics 2012. doi:10.1364/CLEO_AT.2012.JTh2A.101.
dc.identifier.isbn978-1-55752-943-5
dc.identifier.doi10.1364/CLEO_AT.2012.JTh2A.101
dc.identifier.urihttp://hdl.handle.net/10754/310652
dc.description.abstractUltra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
dc.language.isoen
dc.publisherThe Optical Society
dc.relation.urlhttp://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2012-JTh2A.101
dc.titleGaN Nanowires Synthesized by Electroless Etching Method
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalConference on Lasers and Electro-Optics 2012
dc.conference.date6–11 May 2012
dc.conference.nameCLEO: Applications and Technology 2012
dc.conference.locationSan Jose, California United States
dc.eprint.versionPublisher's Version/PDF
kaust.personNajar, Adel
kaust.personBen Slimane, Ahmed
kaust.personAnjum, Dalaver H.
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
refterms.dateFOA2018-06-14T03:22:48Z


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