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    GaN Nanowires Synthesized by Electroless Etching Method

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    Thumbnail
    Name:
    CLEO_SI-2012-JTh2A.101.pdf
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    Description:
    ANajar_CLEO2012
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    Type
    Conference Paper
    Authors
    Najar, Adel cc
    Anjum, Dalaver H. cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    Ben Slimane, Ahmed cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Imaging and Characterization Core Lab
    Photonics Laboratory
    Physical Science and Engineering (PSE) Division
    Date
    2012
    Permanent link to this record
    http://hdl.handle.net/10754/310652
    
    Metadata
    Show full item record
    Abstract
    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
    Citation
    Najar A, Slimane AB, Anjum DH, Ng TK, Ooi BS (2012) GaN Nanowires Synthesized by Electroless Etching Method. Conference on Lasers and Electro-Optics 2012. doi:10.1364/CLEO_AT.2012.JTh2A.101.
    Publisher
    The Optical Society
    Journal
    Conference on Lasers and Electro-Optics 2012
    Conference/Event name
    CLEO: Applications and Technology 2012
    ISBN
    978-1-55752-943-5
    DOI
    10.1364/CLEO_AT.2012.JTh2A.101
    Additional Links
    http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2012-JTh2A.101
    ae974a485f413a2113503eed53cd6c53
    10.1364/CLEO_AT.2012.JTh2A.101
    Scopus Count
    Collections
    Conference Papers; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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