Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Imaging and Characterization Core Lab
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Date
2012Permanent link to this record
http://hdl.handle.net/10754/310652
Metadata
Show full item recordAbstract
Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.Citation
Najar A, Slimane AB, Anjum DH, Ng TK, Ooi BS (2012) GaN Nanowires Synthesized by Electroless Etching Method. Conference on Lasers and Electro-Optics 2012. doi:10.1364/CLEO_AT.2012.JTh2A.101.Publisher
The Optical SocietyConference/Event name
CLEO: Applications and Technology 2012ISBN
978-1-55752-943-5ae974a485f413a2113503eed53cd6c53
10.1364/CLEO_AT.2012.JTh2A.101