Show simple item record

dc.contributor.authorShen, Chao
dc.contributor.authorKang, Chun Hong
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2013-12-28T15:41:57Z
dc.date.available2013-12-28T15:41:57Z
dc.date.issued2013
dc.identifier.citationC. Shen, T. K. Ng, C. H. Kang, and B. S. Ooi, "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper AW3K.3, Beijing, China.
dc.identifier.isbn978-1- 55752-989-3
dc.identifier.doi10.1364/ACPC.2013.AW3K.3
dc.identifier.urihttp://hdl.handle.net/10754/310650
dc.description.abstractThe mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.
dc.language.isoen
dc.publisherOptical Society of America
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-AW3K.3
dc.titleMesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalOSA Technical Digest (online)
dc.eprint.versionPublisher's Version/PDF
refterms.dateFOA2018-06-13T17:45:16Z


Files in this item

Thumbnail
Name:
ACP-2013-AW3K.3.pdf
Size:
420.0Kb
Format:
PDF
Description:
CShen_ACP2013

This item appears in the following Collection(s)

Show simple item record