Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
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AbstractThe mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.
CitationC. Shen, T. K. Ng, C. H. Kang, and B. S. Ooi, "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper AW3K.3, Beijing, China.
PublisherOptical Society of America
JournalOSA Technical Digest (online)