Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionPhotonics Laboratory
Date
2013Permanent link to this record
http://hdl.handle.net/10754/310650
Metadata
Show full item recordAbstract
The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.Citation
C. Shen, T. K. Ng, C. H. Kang, and B. S. Ooi, "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper AW3K.3, Beijing, China.Publisher
The Optical SocietyJournal
OSA Technical Digest (online)ISBN
978-1- 55752-989-3Additional Links
https://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-AW3K.3ae974a485f413a2113503eed53cd6c53
10.1364/ACPC.2013.AW3K.3