Effective antireflection properties of porous silicon nanowires for photovoltaic applications
Anjum, Dalaver H.
Ng, Tien Khee
Ooi, Boon S.
Ben Slimane, Ahmed
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/310648
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AbstractPorous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 µm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.
CitationNajar A, Al-Jabr AA, Slimane AB, Alsunaidi MA, Ng TK, et al. (2013) Effective antireflection properties of porous silicon nanowires for photovoltaic applications. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550769.
Conference/Event name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013