Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Online Publication Date2013-07-11
Print Publication Date2013-04
Permanent link to this recordhttp://hdl.handle.net/10754/310643
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AbstractMicro-structured group-III-nitrides are considered as promising strain relief structures for high efficiency solid state lighting. In this work, the strain field in InGaN/GaN multi-quantum wells (MQWs) micro-pillars is investigated using micro-Raman spectroscopy and the design of micro-pillars were studied experimentally. We distinguished the strained and strain-relieved signatures of the GaN layer from the E2 phonon peak split from the Raman scattering signatures at 572 cm-1 and 568 cm-1, respectively. The extent of strain relief is examined considering the height and size of micro-pillars fabricated using focused ion beam (FIB) micro-machining technique. A significant strain relief can be achieved when one micro-machined through the entire epi-layers, 3 μm in our study. The dependence of strain relief on micro-pillar diameter (D) suggested that micro-pillar with D < 3 μm showed high degree of strain relief. Our results shed new insights into designing strain-relieved InGaN/GaN microstructures for high brightness light emitting diode arrays. © 2013 IEEE.
CitationShen C, Ng TK, Ooi BS, Cha D (2013) Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550773.
Conference/Event name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013