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    Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs

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    Type
    Conference Paper
    Authors
    Shen, Chao cc
    Cha, Dong Kyu
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Imaging and Characterization Core Lab
    Photonics Laboratory
    Date
    2013-07-11
    Online Publication Date
    2013-07-11
    Print Publication Date
    2013-04
    Permanent link to this record
    http://hdl.handle.net/10754/310643
    
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    Abstract
    Micro-structured group-III-nitrides are considered as promising strain relief structures for high efficiency solid state lighting. In this work, the strain field in InGaN/GaN multi-quantum wells (MQWs) micro-pillars is investigated using micro-Raman spectroscopy and the design of micro-pillars were studied experimentally. We distinguished the strained and strain-relieved signatures of the GaN layer from the E2 phonon peak split from the Raman scattering signatures at 572 cm-1 and 568 cm-1, respectively. The extent of strain relief is examined considering the height and size of micro-pillars fabricated using focused ion beam (FIB) micro-machining technique. A significant strain relief can be achieved when one micro-machined through the entire epi-layers, 3 μm in our study. The dependence of strain relief on micro-pillar diameter (D) suggested that micro-pillar with D < 3 μm showed high degree of strain relief. Our results shed new insights into designing strain-relieved InGaN/GaN microstructures for high brightness light emitting diode arrays. © 2013 IEEE.
    Citation
    Shen C, Ng TK, Ooi BS, Cha D (2013) Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550773.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    2013 Saudi International Electronics, Communications and Photonics Conference
    Conference/Event name
    2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
    DOI
    10.1109/SIECPC.2013.6550773
    Additional Links
    http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6550773
    ae974a485f413a2113503eed53cd6c53
    10.1109/SIECPC.2013.6550773
    Scopus Count
    Collections
    Conference Papers; Imaging and Characterization Core Lab; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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