Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Imaging and Characterization Core Lab
Photonics Laboratory
Date
2013-07-11Online Publication Date
2013-07-11Print Publication Date
2013-04Permanent link to this record
http://hdl.handle.net/10754/310643
Metadata
Show full item recordAbstract
Micro-structured group-III-nitrides are considered as promising strain relief structures for high efficiency solid state lighting. In this work, the strain field in InGaN/GaN multi-quantum wells (MQWs) micro-pillars is investigated using micro-Raman spectroscopy and the design of micro-pillars were studied experimentally. We distinguished the strained and strain-relieved signatures of the GaN layer from the E2 phonon peak split from the Raman scattering signatures at 572 cm-1 and 568 cm-1, respectively. The extent of strain relief is examined considering the height and size of micro-pillars fabricated using focused ion beam (FIB) micro-machining technique. A significant strain relief can be achieved when one micro-machined through the entire epi-layers, 3 μm in our study. The dependence of strain relief on micro-pillar diameter (D) suggested that micro-pillar with D < 3 μm showed high degree of strain relief. Our results shed new insights into designing strain-relieved InGaN/GaN microstructures for high brightness light emitting diode arrays. © 2013 IEEE.Citation
Shen C, Ng TK, Ooi BS, Cha D (2013) Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550773.Conference/Event name
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013ae974a485f413a2113503eed53cd6c53
10.1109/SIECPC.2013.6550773