InGaN micro-LED-pillar as the building block for high brightness emitters
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Permanent link to this recordhttp://hdl.handle.net/10754/310642
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AbstractIn summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
CitationShen C, Ng TK, Yang Y, Cha D, Ooi BS (2013) InGaN micro-LED-pillar as the building block for high brightness emitters. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656491.
Journal2013 IEEE Photonics Conference
Conference/Event name2013 26th IEEE Photonics Conference, IPC 2013