InGaN micro-LED-pillar as the building block for high brightness emitters
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Online Publication Date2013-11-11
Print Publication Date2013-09
Permanent link to this recordhttp://hdl.handle.net/10754/310642
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AbstractIn summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
CitationShen C, Ng TK, Yang Y, Cha D, Ooi BS (2013) InGaN micro-LED-pillar as the building block for high brightness emitters. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656491.
Journal2013 IEEE Photonics Conference
Conference/Event name2013 26th IEEE Photonics Conference, IPC 2013