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    InGaN micro-LED-pillar as the building block for high brightness emitters

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    Description:
    CShen_IPC2013
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    Type
    Conference Paper
    Authors
    Shen, Chao cc
    Cha, Dong Kyu
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    Yang, Yang
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Imaging and Characterization Core Lab
    Photonics Laboratory
    Date
    2013-11-11
    Online Publication Date
    2013-11-11
    Print Publication Date
    2013-09
    Permanent link to this record
    http://hdl.handle.net/10754/310642
    
    Metadata
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    Abstract
    In summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
    Citation
    Shen C, Ng TK, Yang Y, Cha D, Ooi BS (2013) InGaN micro-LED-pillar as the building block for high brightness emitters. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656491.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    2013 IEEE Photonics Conference
    Conference/Event name
    2013 26th IEEE Photonics Conference, IPC 2013
    DOI
    10.1109/IPCon.2013.6656491
    Additional Links
    http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656491
    ae974a485f413a2113503eed53cd6c53
    10.1109/IPCon.2013.6656491
    Scopus Count
    Collections
    Conference Papers; Imaging and Characterization Core Lab; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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