InGaN micro-LED-pillar as the building block for high brightness emitters
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Imaging and Characterization Core Lab
Photonics Laboratory
Date
2013-11-11Online Publication Date
2013-11-11Print Publication Date
2013-09Permanent link to this record
http://hdl.handle.net/10754/310642
Metadata
Show full item recordAbstract
In summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.Citation
Shen C, Ng TK, Yang Y, Cha D, Ooi BS (2013) InGaN micro-LED-pillar as the building block for high brightness emitters. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656491.Journal
2013 IEEE Photonics ConferenceConference/Event name
2013 26th IEEE Photonics Conference, IPC 2013ae974a485f413a2113503eed53cd6c53
10.1109/IPCon.2013.6656491