KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/308860
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AbstractA transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ?1.2 ?m, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ?11.5 dB in the wavelength range of 1.2-1.6 ?m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates. © 1989-2012 IEEE.
CitationNg TK, Khan MZM, Al-Jabr A, Ooi BS (2012) Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer. IEEE Photon Technol Lett 24: 724-726. doi:10.1109/LPT.2012.2187329.
SponsorsKAUST—University of Michigan Academic Excellence Alliance Grant 2010