AuthorsKhan, Mohd Adnan
AdvisorsAlshareef, Husam N.
ProgramMaterial Science and Engineering
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Embargo End Date2014-12-01
Permanent link to this recordhttp://hdl.handle.net/10754/306086
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Access RestrictionsAt the time of archiving, the student author of this dissertation opted to temporarily restrict access to it. The full text of this dissertation became available to the public after the expiration of the embargo on 2014-12-01.
AbstractWith the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] and highly insulating dielectric poly(p-phenylene oxide) [PPO] with drastically improved fatigue and thermal stability; novel all-polymer ferroelectric diodes based on blends of ferroelectric [P(VDF-TrFE)] and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester [PCBM] with resistive switching properties and the first hybrid p-type ferroelectric memory with transparent tin monoxide [SnO] on plastic substrates with record mobilities.
CitationKhan, M. A. (2013). Polymer Ferroelectric Memory for Flexible Electronics. KAUST Research Repository. https://doi.org/10.25781/KAUST-G1Y55