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dc.contributor.advisorAlshareef, Husam N.
dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.date.accessioned2013-12-02T13:13:47Z
dc.date.available2014-11-12T00:00:00Z
dc.date.issued2013-11
dc.identifier.citationCaraveo-Frescas, J. A. (2013). Transparent Oxide Semiconductors for Emerging Electronics. KAUST Research Repository. https://doi.org/10.25781/KAUST-XU0LV
dc.identifier.doi10.25781/KAUST-XU0LV
dc.identifier.urihttp://hdl.handle.net/10754/306065
dc.description.abstractTransparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then demonstrated by the fabrication of hybrid ferroelectric field effect transistors composed of organic ferroelectric layer polyvinylidene fluoride trifluoroethylene and inorganic p-type semiconductor tin monoxide. Both rigid and flexible devices are demonstrated, showing the advantages of low temperature oxides over polymer semiconductors by achieving much better performance, such as order of magnitude higher hole mobility.
dc.language.isoen
dc.subjectP-type Oxides
dc.subjectP-type Oxides Semiconductors
dc.subjectTin monoxide
dc.subjectTransparent Electronics.
dc.subjectThin Film Transistors
dc.subjectTransparent
dc.titleTransparent Oxide Semiconductors for Emerging Electronics
dc.typeDissertation
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.rights.embargodate2014-11-12
thesis.degree.grantorKing Abdullah University of Science and Technology
dc.contributor.committeememberAljawhari, Hala
dc.contributor.committeememberAl-Kassab, Talaat
dc.contributor.committeememberOoi, Boon S.
dc.contributor.committeememberSchwingenschlögl, Udo
thesis.degree.disciplineMaterial Science and Engineering
thesis.degree.nameDoctor of Philosophy
dc.rights.accessrightsAt the time of archiving, the student author of this dissertation opted to temporarily restrict access to it. The full text of this dissertation became available to the public after the expiration of the embargo on 2014-11-12.
refterms.dateFOA2014-11-12T00:00:00Z


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