• Login
    View Item 
    •   Home
    • Academic Divisions
    • Physical Science & Engineering (PSE)
    • Material Science and Engineering Program
    • View Item
    •   Home
    • Academic Divisions
    • Physical Science & Engineering (PSE)
    • Material Science and Engineering Program
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguidePlumX LibguideSubmit an Item

    Statistics

    Display statistics

    Transparent Oxide Semiconductors for Emerging Electronics

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    Jesus Caraveo Frescas - Final Draft.pdf
    Size:
    33.57Mb
    Format:
    PDF
    Download
    Type
    Dissertation
    Authors
    Caraveo-Frescas, Jesus Alfonso
    Advisors
    Alshareef, Husam N. cc
    Committee members
    Aljawhari, Hala
    Al-Kassab, Talaat
    Ooi, Boon S. cc
    Schwingenschlögl, Udo cc
    Program
    Material Science and Engineering
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2013-11
    Embargo End Date
    2014-11-12
    Permanent link to this record
    http://hdl.handle.net/10754/306065
    
    Metadata
    Show full item record
    Access Restrictions
    At the time of archiving, the student author of this dissertation opted to temporarily restrict access to it. The full text of this dissertation became available to the public after the expiration of the embargo on 2014-11-12.
    Abstract
    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then demonstrated by the fabrication of hybrid ferroelectric field effect transistors composed of organic ferroelectric layer polyvinylidene fluoride trifluoroethylene and inorganic p-type semiconductor tin monoxide. Both rigid and flexible devices are demonstrated, showing the advantages of low temperature oxides over polymer semiconductors by achieving much better performance, such as order of magnitude higher hole mobility.
    DOI
    10.25781/KAUST-XU0LV
    ae974a485f413a2113503eed53cd6c53
    10.25781/KAUST-XU0LV
    Scopus Count
    Collections
    Dissertations; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

     
    DSpace software copyright © 2002-2021  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.