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dc.contributor.authorFahad, Hossain M.
dc.contributor.authorHussain, Aftab M.
dc.contributor.authorHussain, Muhammad Mustafa
dc.contributor.authorSevilla, Galo T.
dc.date.accessioned2013-06-09T14:05:10Z
dc.date.available2013-06-09T14:05:10Z
dc.date.issued2013-04-05
dc.identifier.citationFahad HM, Hussain AM, Torres Sevilla G, Hussain MM (2013) Wavy channel transistor for area efficient high performance operation. Appl Phys Lett 102: 134109. doi:10.1063/1.4800234.
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4800234
dc.identifier.urihttp://hdl.handle.net/10754/293686
dc.description.abstractWe report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://link.aip.org/link/APPLAB/v102/i13/p134109/s1&Agg=doi
dc.rightsArchived with thanks to Applied Physics Letters
dc.subjectMOSFET
dc.titleWavy channel transistor for area efficient high performance operation
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Engineering Mathematics, Faculty of Engineering Cairo University Egypt
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personFahad, Hossain M.
kaust.personHussain, Aftab M.
kaust.personSevilla, Galo T.
kaust.personHussain, Muhammad Mustafa
refterms.dateFOA2014-04-05T00:00:00Z


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