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dc.contributor.advisorSchwingenschlögl, Udo
dc.contributor.authorBianchi Granato, Danilo
dc.date.accessioned2013-03-16T07:58:53Z
dc.date.available2013-03-16T07:58:53Z
dc.date.issued2012-05
dc.identifier.doi10.25781/KAUST-J4070
dc.identifier.urihttp://hdl.handle.net/10754/273094
dc.description.abstractIn the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.
dc.language.isoen
dc.subjectDensity Functional Theory
dc.subjectTin monoxide
dc.subjectTransparent semiconductor
dc.subjectFormation Energy
dc.subjectHole mobility
dc.titleA Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor
dc.typeThesis
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
thesis.degree.grantorKing Abdullah University of Science and Technology
dc.contributor.committeememberAlshareef, Husam N.
dc.contributor.committeememberManchon, Aurelien
thesis.degree.disciplineMaterials Science and Engineering
thesis.degree.nameMaster of Science
refterms.dateFOA2014-12-31T00:00:00Z


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