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    Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?

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    AftabHussainThesis.pdf
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    13.78Mb
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    Description:
    Aftab Hussain Thesis
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    Type
    Thesis
    Authors
    Hussain, Aftab M. cc
    Advisors
    Hussain, Muhammad Mustafa cc
    Committee members
    Amassian, Aram cc
    Foulds, Ian G.
    Program
    Electrical Engineering
    KAUST Department
    Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
    Date
    2012-12
    Permanent link to this record
    http://hdl.handle.net/10754/255093
    
    Metadata
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    Abstract
    There has been an exponential increase in the performance of silicon based semiconductor devices in the past few decades. This improvement has mainly been due to dimensional scaling of the MOSFET. However, physical constraints limit the continued growth in device performance. To overcome this problem, novel channel materials are being developed to enhance carrier mobility and hence increase device performance. This work explores a novel semiconducting alloy - Silicon-tin (SiSn) as a channel material for CMOS applications. For the first time ever, MOS devices using SiSn as channel material have been demonstrated. A low cost, scalable and manufacturable process for obtaining SiSn by diffusion of Sn into silicon has also been explored. The channel material thus obtained is electrically characterized by fabricating MOSCAPs and Mesa-shaped MOSFETs. The SiSn devices have been compared to similar devices fabricated using silicon as channel material.
    Citation
    Hussain, A. M. (2012). Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS? KAUST Research Repository. https://doi.org/10.25781/KAUST-NNP9X
    DOI
    10.25781/KAUST-NNP9X
    ae974a485f413a2113503eed53cd6c53
    10.25781/KAUST-NNP9X
    Scopus Count
    Collections
    MS Theses; Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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