KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Online Publication Date2012-10-26
Print Publication Date2013-02
Permanent link to this recordhttp://hdl.handle.net/10754/250453
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AbstractIn this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.
CitationZidan MA, Fahmy HAH, Hussain MM, Salama KN (2013) Memristor-based memory: The sneak paths problem and solutions. Microelectronics Journal 44: 176-183. doi:10.1016/j.mejo.2012.10.001.