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dc.contributor.authorRadwan, Ahmed G.
dc.contributor.authorSalama, Khaled N.
dc.contributor.authorZidan, Mohammed A.
dc.date.accessioned2012-10-06T19:32:48Z
dc.date.available2012-10-06T19:32:48Z
dc.date.issued2012-10-06
dc.identifier.citationRadwan AG, Zidan MA, Salama KN (2010) On the mathematical modeling of memristors. 2010 International Conference on Microelectronics. doi:10.1109/ICM.2010.5696139.
dc.identifier.doi10.1109/ICM.2010.5696139
dc.identifier.urihttp://hdl.handle.net/10754/247351
dc.description.abstractSince the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor's resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5696139
dc.subjectmemristor
dc.subjectModeling
dc.titleOn the mathematical modeling of memristors
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentSensors Lab
dc.identifier.journal2010 International Conference on Microelectronics
dc.conference.date2010-12-19 to 2010-12-22
dc.conference.name2010 International Conference on Microelectronics, ICM'10
dc.conference.locationCairo, EGY
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Engineering Mathematics, Faculty of Engineering, Cairo University, Egypt
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personRadwan, Ahmed G.
kaust.personZidan, Mohammed A.
kaust.personSalama, Khaled N.
refterms.dateFOA2018-06-13T13:54:53Z


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